Abstract:By utilizing the dipole interactions, polar heterostructures are developing toward two-dimensional/three-dimensional (2D/3D) hybrid dimensions for unique phenomena such as polarization-induced electric field, charge separation, band-structure modification, etc. In this study, we have constructed 2D/3D alpha-In2Se3/GaN polar heterostructures by stacking 2D alpha-In2Se3 and 3D wurtzite GaN semiconductors with distinct polarity configurations. Upon GaN contacting with alpha-In2Se3, the structural stability demonstrates a direct dependence on the polarity assembly, as evidenced by the change of binding energy from -1.39/-1.83 eV in Ga-polarity to -2.99/-1.95 eV in N-polarity. In particular, the polarity inversion of GaN not only dictates the direction of charge transfer but also increases the electrostatic potential differences from 2.92/1.84 eV in N-polarity to 3.65/5.10 eV in Ga-polarity. Moreover, the interfacial polarization and electronic band profiles of alpha-In2Se3/GaN have been further adjusted by applying the external electric field. It is found that the interfacial dipole interaction plays a crucial role in the external electric field modulation, with a direct correlation to the charge distribution at alpha-In2Se3/GaN polar heterointerfaces. By sweeping the external electric field from -0.4 to 0.4 V/& Aring;, the alpha-In2Se3(up arrow)/GaN(up arrow) and alpha-In2Se3(down arrow)/GaN(up arrow) polar heterostructures maintain the type-III electronic band profiles, attributed to the electrostatic shielding effect of high-density charge carriers. However, the band alignments of alpha-In2Se3(up arrow)/GaN(down arrow) and alpha-In2Se3(down arrow)/GaN(down arrow) polar heterostructures have been extensively transformed from type-III, to type-II, and then to type-I. Our findings demonstrate the effective capability of polarity inversion and external electric field on manipulating dipole interactions of 2D/3D polar heterostructures, paving the way for the innovative design and optimization of next-generation optoelectronics, information memory, and neural computing applications.

Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

Hetero-integration of Quasi Two-Dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and Non-Volatile Modulation of Two-Dimensional Electron Gas

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Ferroelectric Field Effect Transistor with A Double-Gate Structure on Algan/Gan Heterostructures

Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarization

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Two-dimensional electron gas characteristics of ferroelectric/GaN heterostructure

Electronic properties and device design of ferroelectric Al2O3/GaN heterostructure

Manipulating Ferroelectric Α-In2se3/gan Dipole Interactions by Polarization Engineering

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility Transistors

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

The Modulation Effect of LPCVD-Si X N Y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer