Abstract:This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the self-consistent solution of Schrödinger-Poisson equations. High sheet carrier density of 1.1×10 13 cm -2 was obtained in the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, which is comparable to the electron concentration in Al 0.2 Ga 0.8 N/GaN heterostructure. The current-voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al 0.2 Ga 0.8 N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al x Ga 1-x N/4H-SiC interface exhibits high electron mobility values of 3365 cm 2 / (V·s) at 77K and 1120 cm 2 / (V·s) at 300K. These results indicate that Al x Ga 1-x N/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

The Modulation Effect of LPCVD-Si X N Y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Effects of Interface Oxidation on the Transport Behavior of the Two-Dimensional-electron-gas in AlGaN/GaN Heterostructures by Plasma-Enhanced-atomic-layer-deposited AlN Passivation

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Prediction of high-density and high-mobility two-dimensional electron gas at Al<inf>x</inf>Ga<inf>1−x</inf>N/4H-SiC interface

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures