Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Annealing Ambient on the Evolution of He-induced Voids in Silicon

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of Annealing Atmosphere on Oxygen Precipitation and Formation of Denuded Zone in Czochralski Silicon Wafer

Effect of Hydrogen Annealing on Voids in arge-Diameter Czochralski Silicon

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Defect Annealing of Neutron-Irradiated Silicon Crystals

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Evolution of secondary defects in arsenic implanted Si

Ion-irradiation-induced athermal annealing of helium bubbles in SiC