Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.

Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

An improved design of Si PNIN tunneling field effect transistor

Investigation of tunneling field effect transistor reliability

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

Reliability Performance of Novel Tunneling Field Effect Transistors Based on Foundry Platform

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Current Enhanced PNPN Tunnel Field-Effect Transistor with L-shaped Gate

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

A Novel Electrical Isolation Solution for Tunnel FET Integration

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

In-Built N+ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

Performance Improvement in P-Type WS2 Field-Effect Transistors with 1T Phase Contacts