Abstract:A complete separation flow for different types of traps, including the separation of energy levels (ETs) and the separation of charging kinetics, making different traps can be modeled and characterized separately by simple experiments. Industrial-grade 7 nm pFinFETs under negative bias temperature instability (NBTI) stress condition is chosen for the demonstration. Four types of traps are identified, including oxide trap Type-A located in the interfacial layer (IL) layer, oxide trap Type-B (B1 and B2) located in the HK layer, and interface trap Type-C located at Si/IL interface. Type-A trap belongs to a preexisting trap which can be well described by the two-state non-radiative multiphonon (NMP) theory and may originate from Vo in SiO2. Types-B1 and Type-B2 traps originate from Ni and Hi respectively, and can be described by incorporating the activation state into the two-state NMP theory. Type-C is located at Si/IL interface and follows the classical power law relationship with the time exponent of 0.17, which may be caused by the breakage of the Si-H bonds due to the reaction with atomic H from either the substrate or the gate. By modeling each type of trap respectively, a unified aging prediction framework was proposed and its long-term predictive capability was experimentally verified under various working conditions. The contribution of each trap to degradation is also discussed, which is helpful to the Design-Technology co-optimization (DTCO) in advanced nodes.

Silc-Based Reassignment of Trapping and Trap Generation Regimes of Positive Bias Temperature Instability

Stress Induced Leakage Current under NBT Stress in P-Mosfets Fabricated with 65nm Technologies

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method

Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

Study of Traps in Low-Temperature Polysilicon Thin Film Transistors Using a Current Transient Method

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Trapping and Detrapping of Oxide Border Traps in Al2o3 Gate Dielectric in Mos2 N-Mosfets under Pbti Stress

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Stress induced leakage current analysis via quantum yield experiments

Modeling of SILC based on electron and hole tunneling. I. Transient effects

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects