Abstract:As stacking technologies, such as 2.5D and 3D packages, continue to accelerate in advanced semiconductor components, the singulation and thinning of Si wafers are becoming increasingly critical. Despite their importance in producing thinner and more reliable Si chips, achieving high reliability remains a challenge, and comprehensive research on the effects of these processing techniques on Si chip integrity is lacking. In this study, the impacts of wafer thinning and singulation on the fracture strength of Si wafers were systematically compared. Three different grinding processes, namely fine grinding, poly-grinding, and polishing, were used for thinning, and the resulting surface morphology and roughness were analyzed using scanning electron microscopy and an interferometer. In addition, the residual mechanical stress on the wafer surface was measured using Raman spectroscopy. The fracture strength of Si wafers and chips was assessed through three-point bending tests. Singulation, including blade dicing, laser dicing, and stealth dicing, was evaluated for its impact on fracture strength. Among these processes, polishing for wafer thinning exhibited the lowest full-width half maximum and intensity ratio of Raman shifts (I480/I520), indicating minimal residual stress and surface defects. Consequently, Si wafers and chips processed through polishing demonstrated the highest fracture strength. Moreover, the 60 μm thick Si wafers and chips showed the highest fracture strength compared with those with thicknesses of 90 and 120 μm, possibly because of the increased flexibility, which mitigates stress. Among the singulation methods, stealth dicing yielded the highest fracture strength, outperforming blade and laser dicing. The combination of wafer thinning via polishing and singulation via stealth dicing presents an optimal solution for producing highly reliable Si chips for 2.5D and 3D packaging. These findings may be valuable in selecting optimal processing technologies for high-reliability Si chip production in industrial settings.

Integrated Process for Silicon Wafer Thinning

An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Surface Stress Evolution in Through Silicon Via Wafer During a Backside Thinning Process

Si Characterization on Thinning and Singulation Processes for 2.5/3D HBM Package Integration

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Study on Subsurface Damage of Wafer Silicon Containing Through Silicon Via in Thinning

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

TSV CMP process optimization and dishing defect reduction

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Optimization of Wafer-level TTV Using RIE Applied for the Extreme Wafer Thinning

Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping

Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Subsurface Damage and Bending Strength Analysis for Ultra-Thin and Flexible Silicon Chips

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

A new process for releasing micromechanical structures in surface micromachining with polysilicon support and LPCVD Si3N4 embedded mask

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

Cutting Speed Dependence of Material Removal Mechanism for Monocrystal Silicon

3D interconnection process development and integration with low stress TSV