Multi-Step Mechanical and Thermal Homogenization for the Warpage Estimation of Silicon Wafers

Zhouyi Xiang,Min Chen,Yonghui Deng,Songhua Huang,Sanli Liu,Ji Li

DOI: https://doi.org/10.3390/mi15030408

IF: 3.4

2024-03-18

Micromachines

Abstract:In response to the increasing demand for high-performance capacitors, with a simultaneous emphasis on minimizing their physical size, a common practice involves etching deep vias and coating them with functional layers to enhance operational efficiency. However, these deep vias often cause warpages during the processing stage. This study focuses on the numerical modeling of wafer warpage that occurs during the deposition of three thin layers onto these vias. A multi-step mechanical and thermal homogenization approach is proposed to estimate the warpage of the silicon wafer. The efficiency and accuracy of this numerical homogenization strategy are validated by comparing detailed and homogenized models. The multi-step homogenization method yields more accurate results compared to the conventional direct homogenization method. Theoretical analysis is also conducted to predict the shape of the wafer warpage, and this study further explores the impact of via depth and substrate thickness.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the warpage problem of silicon wafers (wafer) after depositing multiple - layer thin films during the manufacturing process of high - density capacitors. Specifically, the paper focuses on estimating the warpage of silicon wafers after depositing three - layer thin films through a multi - step mechanical and thermal homogenization method. These thin films include silicon dioxide (SiO₂), silicon nitride (Si₃N₄) and doped polysilicon (poly - Si). The main goal of the research is to develop an effective numerical simulation method to accurately predict the degree of warpage of silicon wafers and analyze the key factors affecting warpage, such as via depth and substrate thickness.

### Background of the Paper
With the increasing demand for high - performance capacitors and the requirement to reduce their physical size at the same time, a common practice is to etch deep vias on silicon wafers and coat functional layers on their surfaces to improve operating efficiency. However, these deep vias often cause warpage of silicon wafers during the processing. Warpage will not only affect the efficiency of subsequent processes, but also lead to problems such as delamination, cracks and degradation of device performance.

### Research Methods
1. **Multi - scale Analysis**:
- **Meso - scale**: Extract the representative volume element (RVE) and perform homogenization analysis through periodic boundary conditions (PBC) to determine the effective mechanical and thermal properties of the RVE.
- **Macro - scale**: Use the effective properties obtained at the micro - scale to perform warpage simulation on the entire silicon wafer.

2. **Multi - step Homogenization Method**:
- **Direct Homogenization**: Use the original properties of each material for homogenization.
- **Multi - step Homogenization**: Update the material properties after each deposition step and perform homogenization step by step.

### Key Formulas
- **Homogenized Stiffness Matrix**:
\[
\sigma_{ij} = C_{ijkl}\epsilon_{ij}
\]
where \(\sigma_{ij}\) is the average stress, \(\epsilon_{ij}\) is the average strain, and \(C_{ijkl}\) is the homogenized stiffness matrix.

- **Coefficient of Thermal Expansion (CTE)**:
\[
\text{CTE}_i=\frac{\epsilon_i}{\Delta T}, \quad i = x, y, z
\]
where \(\epsilon_i\) is the thermal strain and \(\Delta T\) is the temperature change.

### Experimental Verification
The research verified the effectiveness and accuracy of the multi - step homogenization method through comparison with detailed models and experimental data. The results show that the multi - step homogenization method predicts the warpage of silicon wafers more accurately than the traditional direct homogenization method.

### Conclusion
The paper proposes a multi - step mechanical and thermal homogenization method for predicting the warpage of silicon wafers after depositing multiple - layer thin films. This method improves the prediction accuracy while ensuring computational efficiency. The research also found that the via depth has a great influence on warpage, and a thicker substrate can reduce warpage, but it will make the silicon wafer thicker. This research result provides a theoretical basis for optimizing the process parameters in the silicon wafer manufacturing process.