Abstract:From high-performance computing (HPC) applications such as Artificial Intelligence (A.I.) rising, advanced multi-chip packaging to integrate different functions could be a fast time-to-market and cost effective solution instead of SOC. Accordingly, more I/O die to die communications for advanced packaging is a need. To fulfill this demand, large number in registered routing lines between dies lead a constant drive for miniaturization for die to die Redistributed Layer (RDL) among industry. In this article, InFO Ultra-High-Density (UHD) RDL technology [1] is demonstrated, with RDL line-width down to submicron range (<1 um). This technology can empower the needs with industry trend. The InFO UHD RDL technology is characterized by electrical performances, e.g., via-chain continuity, RDL Comb/Meander Rs, line-to-line leakage current, and eventually reliability testing such as electromigration (EM), stress migration (SM), breakdown voltage (Vbd), Time-Dependent-Dielectric Breakdown (TDDB), etc. After process optimization, the electrical test data demonstrate >99% yields from via-chain continuity, RDL Comb/Meander Rs and leakage current. Initial reliability testing shows good performance from EM, SM, Vbd, TDDB, etc. Package-level reliability test and results will also be addressed in this article. The potential challenges ahead will be discussed in terms of fundamental technical confinements as further scaling-down in RDL line-width and via, based on simulated and theoretical predictions, and possible approaches to resolve them.

Design And Optimization Of Redistribution Layer (Rdl) On Tsv Interposer For High Frequency Applications

Process Development and Characterization of BCB-based Redistribution Layer (RDL) for Silicon Interposer Application

Design and Simulation to Reduce the Crosstalk of Ultra-Fine Line Width/space in the Redistribution Layer

A Novel Dieletric Slot Stripline Structure for Millimeter Wave Flexible Printed Circuit

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

A Compact Passive Equalizer Design for Differential Channels in TSV-Based 3-D ICs

Low-loss Through Silicon Vias (tsvs) and Transmission Lines for 3D Optoelectronic Integration

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation

A RF Redundant TSV Interconnection for High Resistance Si Interposer

Electrical Measurement and Analysis of TSV/RDL for 3D Integration

Interposer Fabrication with Annular Copper Tsv and Multi-Layered Redistribution Layer

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Redundant Vias Insertion for Performance Enhancement in 3D ICs.

A structure optimization for integrated binary reconfigurable true time delay lines

Thermal-mechanical Reliability Analysis of Connection Structure Between Redistribution Layer and TSV for MEMS Packaging

A Novel Submicron Polymer Re-Distribution Layer Technology for Advanced InFO Packaging

Design and analysis of an I-shaped TSV structure for 3D SiP

A Novel Low-Warpage Hyper RDL (HRDL) Interposer Enabled by Low Temperature Hybrid Bonding for Advanced Packaging Applications

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Modeling of the RF Coaxial TSV Configuration Inside the Silicon Interposer with Embedded Cooling Cavity