Abstract:The demand for computation driven by machine learning and deep learning applications has experienced exponential growth over the past five years [1], leading to a significant surge in computing hardware products. Meanwhile, this rapid increase has exacerbated the memory wall bottleneck within mainstream Von Neumann architectures [2]. For instance, NVIDIA GPUs have gained nearly a 200x increase in fp32 computing power, transitioning from P100 to H100 in the last five years [3-4], accompanied by a mere 8x scaling in memory bandwidth. Addressing the need to mitigate data movement challenges, process-in-memory designs, especially ReRAM-based solutions, have emerged as compelling candidates [5-6]. However, this shift in hardware design poses distinct challenges at the design phase, given the limitations of existing hardware design tools. Popular design tools today can be used to characterize analog behavior via SPICE tools [7], system and logical behavior using Verilog tools [8], and mixed signal behavior through toolbox like CPPSIM [9]. Nonetheless, the design of in-memory computing systems, especially those involving non-CMOS devices, presents a unique need for characterizing mixed-signal computing behavior across a large number of cells within a memory bank. This requirement falls beyond the scope of conventional design tools. In this paper, we bridge this gap by introducing the ARAGORN framework — a GPU-accelerated mixed-signal transient simulator for analyzing ReRAM crossbar array. This tool facilitates the characterization of analog circuit and device behavior on a large scale, while also providing enhanced simulation performance for complex algorithm analysis, sign-off, and verification.

Fast Setup Time Characterization of Static Random Access Memory Based on Search-Delay

Design Of A Dynamic Memory Access Scheduler

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

The Fast Simulation Model of SRAM

A MEMORY CHARACTERIZATION METHOD BASED ON CIRCUIT REDUCTION

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

Latency Insertion Method for Accelerated Simulation of Memristor Crossbar Array in Neuromorphic Chip

An On-Chip Circuit For Timing Measurement Of Sram Ip

Highly accurate power modeling method for SRAM structures with simple circuit simulation

Design and Implementation of a High-resolution SRAM Timing Parameters Measuring Circuit

A High-Precision SRAM Timing Parameter Measurement Circuit Based on Delay Line

ReARTSim: an ReRAM array transient simulator with GPU optimized runtime Acceleration

Memory Access Schedule Minimization for Embedded Systems

-Memory Computing Based Reliable and High Speed Schmitt trigger 10T SRAM cell design

A heterogeneous design methodology for STT-RAM memory system of mobile SoC

An Effective Test Method for Block RAMs in Heterogeneous FPGAs Based on a Novel Partial Bitstream Relocation Technique

An Efficient Synchronous Static Memory design for Embedded System

Design and Implementation of SRAM for LUT and CLB Using Clocking Mechanism in Quantum-Dot Cellular Automata

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

An 8kb 40-Nm 2T2MTJ STT-MRAM Design with 2.6ns Access Time and Time-Adjustable Writing Process

A Novel Read Circuit for RRAM Based on RC Delay Effect