Abstract:High‐quality hexagonal boron nitride thin films are grown on Ge(001)/Si substrates from borazine. The formation of randomly oriented nano‐crystallites is suppressed by changing the reactor configuration. Local changes in borazine temperature and partial pressure distribution are found to be responsible for this effect via computational fluid dynamics simulations, as they impact gas phase reactions and film thickness homogeneity. The chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high‐quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well understood yet. The influence of local changes in pressure and temperature due to different reactor configurations on the structure and quality of hBN films grown on Ge(001)/Si is studied. Injection of the borazine precursor close to the sample surface results in an inhomogeneous film thickness, attributed to an inhomogeneous pressure distribution at the surface, as shown by computational fluid dynamics simulations. The additional formation of nanocrystalline islands is attributed to unfavorable gas phase reactions due to the radiative heating of the injector. Both issues are mitigated by increasing the injector‐sample distance, leading to an 86% reduction in pressure variability on the sample surface and a 200 °C reduction in precursor temperature. The resulting hBN films exhibit no nanocrystalline islands, improved thickness homogeneity, and high crystalline quality (Raman FWHM = 23 cm−1). This is competitive with hBN films grown on other non‐metal substrates but achieved at lower temperature and with a low thickness of only a few nanometers.

Effect of Pressures on the Chemical Vapor Deposition of BN Using Borazine

Direct Synthesis of Sp3‐hybridized BCN Compound by High Pressure and Temperature

Effect of Total Pressure on Crystallinity of Boron Carbon Nitride Thin Films Deposited by RF Magnetron Sputtering

Effects of carrier gas on formation and tribological behavior of BN films deposited by PCVD

Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane

Pressure-Induced Boron Nitride Nanotube Derivatives: 3d Metastable Allotropes

Effect of Synthesis Conditions of BCNO on the Formation and Structural Ordering of BN at 1200 °C and 1 GPa

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si

BN Films Deposited by HFPECVD and the Mechanism of the Process

Effect of Pressure on the Growth of Boron and Nitrogen Doped HFCVD Diamond Films on WC–Co Substrate

Mechanical Properties and Bonding Structure of Boron Carbon Nitride Films Synthesized by Dual Ion Beam Sputtering

Pressure-induced Vapor Synthesis, Formation Mechanism, and Thermal Stability of Well-Dispersed Boron Nitride Spheres

ChemInform Abstract: Synthesis of Cubic Boron Nitride from Boron Nitride Synthesized by Pressure Pyrolysis of Borazine.

The formation of sp3 bonding in compressed BN

Composition and Structure of BCN Films Prepared by Ion Beam-Assisted Pulsed Laser Deposition

The Formation of Sp 3 Bonding in Compressed BN

Effect of Flow Rate and Precursor Sublimation Temperature on the LPCVD Growth of Hexagonal Boron Nitride

Boron nitride nanotube precursor formation during high-temperature synthesis: kinetic and thermodynamic modelling

New boron nitride monolith phases from high-pressure compression of double-walled boron nitride nanotubes