Abstract:The two main polymorphs of boron nitride are hexagonal (h-BN) and cubic (c-BN) phases and both show attractive material properties to be employed under extreme environments. h-BN is also known as "white graphene" due to the matching hexagonal crystal symmetry and shows a layered structure which provides advantages as a lubricant material and as gate dielectrics for two-dimensional (2D) transistor channels. On the other hand, c-BN is analogous to another important elemental carbon material, diamond. While the mechanical strength of c-BN is lower than diamond, the thermal and chemical stability is even superior. Both h-BN and c-BN films are therefore strong candidates for applications under harsh ambient, including high-temperature, high-pressure, and corroding factors. BN films and coatings are conventionally grown using high-temperature CVD methods with typical substrate temperatures over 1000 o C. To reduce the deposition temperatures of this material while preserving the attractive crystal properties, alternative lower temperature physical and chemical vapor deposition strategies have been offered in the literature. Plasma-enhanced atomic layer deposition (PEALD) provides significant advantages over other methods such as precision thickness control, ultimate conformality, while reducing the growth temperature substantially. In our previous work, we had demonstrated the crystalline synthesis of h-BN films at substrate temperatures as low as 350 o C, while no growth was observed at lower substrate temperatures. In this work, we aim to demonstrate the feasibility of growing c-BN at substrate temperatures reaching 200 o C via a customized PEALD reactor featuring a large-diameter capacitively-coupled hollow-cathode plasma source with a relatively short source-to-substrate distance. We used Si(100), sapphire, and glass as the substrates to deposit the films. The growth temperature is kept between 150 and 250 °C, 10 sccm of N 2 flow is used as a carrier gas and Ar-purging gas flow was kept at 50 sccm. The triethylboron (TEB) precursor and various nitrogen plasma chemistries including different compositions of N 2 , H 2 , and Ar gases are utilized. The optimized growth condition is determined from in-situ monitored saturation studies, where the growth-per-cycle (GPC) parameter is noted for different precursor pulse time (15 and 30 ms), rf-plasma power (100 W to 250 W) and plasma-gas chemistries (N 2 -only, N 2 /H 2 , Ar/N 2 , Ar/N 2 /H 2 at varying ratios). While the 200 °C as-grown BN films exhibited nanocrystalline c-BN with relatively weak crystal peaks as verified by XRD measurements, vacuum annealing at 5 mTorr N 2 flow and 700 °C transformed the film structure into single-phase polycrystalline c-BN. The spectroscopic ellipsometer, x-ray reflectivity (XRR), and x-ray photoelectron spectroscopy (XPS) studies will be presented as well as the influence of post-deposition vacuum annealing to further improve the crystalline structure of c-BN films. Basic electrical properties of the grown BN films will be characterized using metal-insulator-semiconductor (MIS) diode temperature-dependent current-voltage (I-V) measurements. A specific effort will be devoted to enhance the as-grown film crystal properties via implementing novel atomic layer plasma annealing processes, which showed its potential for the ultrawide bandgap Ga 2 O 3 alloy. Another research question to be investigated is whether there is a possibility of tuning the material phase from cubic to hexagonal by carefully adjusting growth and in-situ Ar-plasma annealing conditions.

Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane

Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Pressure-Induced Boron Nitride Nanotube Derivatives: 3d Metastable Allotropes

Low-Temperature Self-Limiting Growth of Cubic Boron Nitride Via Hollow-Cathode Plasma-Enhanced Atomic Layer Deposition

In situ X-ray study of ammonia borane at high pressures

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Title: Periodic Mesoporous Hexagonal Boron Nitride at High Pressure: A Route to Cubic Boron Nitride Nanocrystals and Mesoporous Cubic Boron Nitride

Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure

Pressure induced structural changes in the potential hydrogen storage compound ammonia borane: A combined X-ray, neutron and theoretical investigation

Understanding vapor phase growth of hexagonal boron nitride

High-pressure phase and transition phenomena in ammonia borane NH3BH3 from X-ray diffraction, Landau theory, and ab initio calculations

Determining Gas Composition for Growth of BNNTs Using Thermodynamic Approach

The formation of sp3 bonding in compressed BN

The Formation of Sp 3 Bonding in Compressed BN

Direct Synthesis of Sp3‐hybridized BCN Compound by High Pressure and Temperature

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

The influence of carbon on polytype and growth stability of epitaxial hexagonal boron nitride films and layers

The structural phase transition of ammonia borane under high pressure