Abstract:Publication date: 31 May 2022 Source: Materials Science Forum Vol. 1062 Author(s): Sofia Aslanidou, Alberto García-García, Gemma Rius, Philippe Godignon Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Three-Dimensional Micro-Channel Structure of Graphene Field-Effect Transistor

Three-dimensional Modeling of Core-structured Field Effect Transistor

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Computational Study of Graphene-Based Vertical Field Effect Transistor

Systhesis and Devices of Graphene

Top‐ and Side‐gated Epitaxial Graphene Field Effect Transistors

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.

The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

Monolayer graphene/hexagonal boron nitride heterostructure

(Invited) Graphene FETs: Promises and Challenges

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Optimizing the fabrication process for high performance graphene field effect transistors.

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Characterization of Single-Walled Carbon Nanotube and Graphene-Based Field-Effect Transistors

Graphene-enhanced van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Transfer Printing of CVD Graphene FETs on Patterned Substrates

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes