Epitaxy-Distorted Spin-Orbit Mott Insulator In Sr2iro4 Thin Films
c rayan serrao,jian liu,j t heron,guneeta singhbhalla,anil kumar yadav,s j suresha,r j paull,d yi,jiun haw chu,m trassin,a vishwanath,elke arenholz,c frontera,j železný,t jungwirth,x marti,r ramesh
DOI: https://doi.org/10.1103/PhysRevB.87.085121
IF: 3.7
2013-01-01
Physical Review B
Abstract:High-quality epitaxial thin films of J(eff) = 1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to similar to 0.3% was observed to drop the c/a tetragonality by 1.2%. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduced anisotropy in the local electronic structure. While the most relaxed thin film shows a consistent dependence with previously reported single crystal bulk measurements, electrical transport reveals a charge gap reduction from 200 meV down to 50 meV for the thinnest and most epitaxy-distorted film. We argue that the reduced tetragonality plays a major role in the change of the electronic structure, which is reflected in the change of the transport properties. Our work opens the possibility for exploiting epitaxial strain as a tool for both structural and functional manipulation of spin-orbit Mott systems. DOI: 10.1103/PhysRevB.87.085121