Preparation and characterization of Cu(In, Ga)(Se, S)2 thin films by sulfurization of electrodeposited Cu(In, Ga) Se2

Yanqing Lai,Sanshuang Shuang Kuang,Fangyang Liu,Zhian Zhang,Jun Liu,Jie Li,Yexiang Liu

2010-01-01

Abstract:The solar cell light absorber Cu(In, Ga)(Se, S)2 (CIGSS) thin films were prepared by annealing the electrodeposited Cu(In, Ga) Se2 (CIGS) precursors in H2S ambient at 500°C. The precursors and annealed films were characterized by energy dispersive X-ray spectroscopy, Auger electron spectroscopy, scanning electron microscopy, X-ray diffraction and Raman scattering. The results show that the complete removal of oxygen atom from the film and a substitution of Se by S can be achieved by H2S-annealing. Furthermore, the depth profiles of constituent elements become more uniform, and the Cu-Se micro-phase can be eliminated by H2S-annealing. Moreover, the CIGSS films have good crystallinity and smaller crystal lattice parameters with S and Ga incorporation into the chalcopyrite structure. © 2010 Chin. Phys. Soc.