Investigating geometries and electronic states of boron and nitrogen Co-doping graphene nanoribbons from a DFTB algorithm
Fangzhou Jiang,Jiajing Li,Ruotian Wang,Qihang Han,Lin Zhang
DOI: https://doi.org/10.1016/j.mssp.2024.108800
IF: 4.1
2024-08-20
Materials Science in Semiconductor Processing
Abstract:Self consistent charge-density functional tight binding simulations are used to investigate the effects of doping B and N atoms on structures and electronic states of armchair graphene nanoribbons passivated by H atoms at the ribbon edges. We considered ten different doping configurations of the doping ribbons, which are categorized into two groups based on whether B and N atoms are in the same carbon ring. The geometric configurations, energy, charge density differences, and Mulliken charges are characterized. The co-doping of B and N atoms in the ribbons significantly affects band structures for different doping arrangements. As covalent bonds form between B and C atoms, the Mulliken population on B atoms changes significantly when B and N atoms are located at different positions of the nanoribbons. The electrical information helps us understand how doping can adjust the electronic states of the graphene nanoribbons to meet the various requirements of electronic devices based on these nanoribbons.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied