Bias-Induced Offset Effect Overlapped On Bipolar-Resistance Effect Based On Co/Sio2/Si Structure

Chongqi Yu,Hui Wang
DOI: https://doi.org/10.1063/1.3469932
IF: 4
2010-01-01
Applied Physics Letters
Abstract:Recent study shows the resistance of a metal-oxide-semiconductor (MOS) structure can be controlled by a laser via a bipolar-resistance effect (BRE). Based on this BRE phenomenon, we find an overlapped offset effect which is induced by an external bias applying to the structure. This offset effect features with a moveable equilibrium point of BRE, suggesting a combined control to the resistance and adding functionality to the MOS-based photoelectric devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3469932]
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