Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS2/p-Si Interface
Kang’an Jiang,Su Hu,Zhiyan Zheng,Zhuyikang Zhao,Dehui Huang,Shuai Liu,Heyu Shen,Hui Wang
DOI: https://doi.org/10.1109/led.2024.3495674
IF: 4.8157
2024-01-01
IEEE Electron Device Letters
Abstract:An in-depth study of new phenomena emerging from the interaction between light and matter is a vital scientific research effort. In this report, we investigate the lateral photovoltaics and spatial resistance on p-Si surfaces under 520 nm laser stimulation. Because of the surface states of p-Si, the lateral photovoltage sensitivity can reach 286 mV/mm, and the spatial resistance change ratio can reach 1059%. Then, we modulate these two effects by growing three different morphologies of MoS 2 on the Si surface. Due to the photosensitive properties of MoS 2 nanoparticles, the lateral photovoltage sensitivity can be enhanced up to 368 mV/mm, while the spatial resistance change ratio can reach 2202%. In this process, we observe a new phenomenon that the p-Si surface modified by MoS 2 no longer shows the traditional bipolar-resistance effect, and the laser position corresponding to the minimum resistance has been shifted. Based on this finding, we refine the previously proposed bipolar-resistance effect theory and confirm our findings through theoretical calculations. Our modulation strategy can realize both photovoltage-based detection and photoconductivity-based detection, which provides a reliable reference for the study of photoelectric devices.