Abstract:The lateral photovoltaic effect (LPE) has garnered significant attention due to its extensive applications in fields such as position-sensitive detectors, artificial intelligence, imaging, automatic driving, and so on. Enhancing LPE sensitivity has long been a focal point for researchers, with recent years showing advancements but still leaving room for improvement. In this study, we achieved sensitivities of up to 1195.02 mV/mm for MoS2 granular film (MoS2-GF)/porous silicon (PS)/p-Si and 951.71 mV/mm for MoS2-QDs/PS/p-Si structures under 520 nm laser irradiation. The results demonstrate sensitivities 1 to 3 orders of magnitude higher than those of traditional LPE devices and surpass the majority of previously reported position-sensitive detectors. Leveraging the enhanced light absorption in PS, we observed a blueshift due to multiple excitonic transitions induced by the quantum confinement effects of MoS2 granular films and quantum dots, assisting the light response of LPE. By forming heterojunctions and serving as carrier mediators, they effectively suppress carrier recombination of photogenerated carriers and holes on the PS surface, thereby enhancing utilization efficiency. Furthermore, they extend the short carrier migration length caused by the irregular surface of PS, promoting lateral diffusion of photogenerated carriers and generating significant lateral concentration gradients. The advancements present novel pathways for ultrawideband and ultrasensitive optoelectronic and position-sensitive detectors, underscoring their vast potential in diverse optoelectronic applications.

Lateral Photovoltaic Effect and Electron Transport Observed in Cr Nano-Film.

Electric-Induced Nonvolatile Enhancement of Lateral Photovoltaic Effect Observed in Chromium Nanofilm

Direct Observation of Lateral Photovoltaic Effect in Nano-Metal-films.

Lateral Photovoltaic Effect in P-Type Silicon Induced by Surface States

THE STUDY OF LATERAL PHOTOVOLATIC EFFECT IN SILICON-BASED PHOTOETCHING NANO-METAL STRUCTURE

Large Near-Infrared Lateral Photovoltaic Effect Observed in Co/Si Metal-Semiconductor Structures

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

Enhanced Lateral Photovoltaic Effect Observed in the Structure of Ag/MoS2 Quantum Dots/n-Type Silicon

Bias-assisted Improved Lateral Photovoltaic Effect Observed in Cu_2O Nano-Films

Enhanced lateral photovoltaic effect observed in the structure of Ag/MoS<sub>2</sub> quantum dots/n-type Silicon

Localized Surface Plasmon Resonances Dominated Giant Lateral Photovoltaic Effect Observed in ZnO/Ag/Si Nanostructure

Large Lateral Photoeffect Observed in Metal–semiconductor Junctions of CoxMnyO Films and Si

Large Lateral Photovoltaic Effect Observed in Nano Al-doped ZnO Films

Blueshift Enhanced Giant Lateral Photovoltaic Effect Observed in MoS2 Granular Film (quantum Dots)/Porous Silicon/p-Si

Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS2/p-Si Interface

Plasmon-enhanced lateral photovoltaic effect observed in Ag-ZnO core-shell nanoparticles

Potential Superiority of P-Type Silicon-Based Metal–Oxide–Semiconductor Structures over N-Type for Lateral Photovoltaic Effects

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Evaluating Nanoscale Ultra-Thin Metal Films by Means of Lateral Photovoltaic Effect in Metal–semiconductor Structure

Effect of Ag layer thickness on lateral photovoltaic mechanisms in Ag/p-Si structures

Infrared Laser Induced Lateral Photovoltaic Effect Observed in Cu(2)O Nanoscale Film.