Enhanced lateral photovoltaic effect observed in the structure of Ag/MoS<sub>2</sub> quantum dots/n-type Silicon

Shuai Liu,Yiru Niu,Xinyuan Dong,Diyuan Zheng,Yuhong Cao,Tianyu Chen,Nan Su,Su Hu,Kang’an Jiang,Zhikai Gan,Hui Wang
DOI: https://doi.org/10.1109/LED.2024.3401137
IF: 4.8157
2024-01-01
IEEE Electron Device Letters
Abstract:Position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been widely utilized in various applications and how to improve the LPE sensitivity has attracted extensive research interest. Recently, MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> quantum dots (QDs) exhibit distinctive behavior compared with that in bulk solids, such as strong light absorption and photosensitivity. In this letter, a type of enhancement MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> QDs-induced LPE is observed in the nanostructure of Ag/MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> QDs/Si. The sensitivity can reach 194.04mV/mm under irradiation of 980nm laser, much higher than 8.39mV/mm in the control sample of Ag/Si. The separation and diffusion of photogenerated carriers at the interface are the key for enhancement. This structure exhibits great application potential in the field of near-infrared short wave PSDs and the research provides an effective method for the optimization of photoelectric devices.
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