Enhanced Optoelectronic Characteristics of MoS2-based Photodetectors Through Hybridization with CdS0.42Se0.58 Nanobelt

Aimin Liu,Jiyu Zhao,Qiuhong Tan,Peizhi Yang,Yingkai Liu,Qianjin Wang
DOI: https://doi.org/10.1142/s2010135x23450042
2023-01-01
Journal of Advanced Dielectrics
Abstract:Monolayer molybdenum disulfide (MoS2) has weak light absorption due to its atomically-thin thickness, thus hindering the development of MoS2-based optoelectronic devices. CdSxSe1-x has excellent photoelectric performance in the visible light range, and its nanostructure shows great potential in new nanoscale electronic and optoelectronic devices. In this work, a composite photodetector device with the combination of monolayer MoS2 nanosheets and CdS(0.42)Se(0.58 )nanobelts has been successfully prepared, which can not only maintain the inherent excellent properties of the two blocks, but also play a synergistic role between them, thus improving the photoelectric performance of the device. The monolayer MoS2 nanosheet /CdS0.42Se0.58 nanobelt photodetector has a wide spectral response range (400-800nm), high responsivity (527.22A/W) and large external quantum efficiency (EQE) (1.0(6)x10(5)%). Compared with the isolated monolayer MoS2 nanosheet, both the responsivity and EQE of the hybrid photodetector are increased by 117.4 times under 620nm illumination. This study provides a way to prepare hybrid photodetectors with wide spectral response and high responsivity.
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