Hybrid structure of PbS QDs and vertically-few-layer MoS 2 nanosheets array for broadband photodetector

Kun Zhang,Shuanglong Feng,Shuai Kang,Yutong Wu,Miaomiao Zhang,Qingshan Wang,Zhiyong Tao,Yaxian Fan,Wenqiang Lu

DOI: https://doi.org/10.1088/1361-6528/abd57f

IF: 3.5

2021-01-11

Nanotechnology

Abstract:Abstract A novel three-dimensional (3D) vertically-few-layer MoS 2 (V-MoS 2 ) nanosheets- zero-dimensional PbS quantum dots (QDs) hybrid structure based broadband photodetector was fabricated, and its photoelectric performance was investigated in detail. We synthesized the V-MoS 2 nanosheets by chemical vapor deposition, using the TiO 2 layer as the induced layer, and proposed a possible growth mechanism. The use of the TiO 2 induction layer successfully changed the growth direction of MoS 2 from parallel to vertical. The prepared V-MoS 2 nanosheets have a large specific surface area, abundantly exposed edges and excellent light absorption capacity. The V-MoS 2 nanosheets detector was then fabricated and investigated, which exhibits a high sensitivity for 635 nm light, a fast response time and an excellent photoelectric response. The V-MoS 2 nanosheets with a height of approximately 1 μ m successfully broke the light absorption limit caused by the atomic thickness. Finally, we fabricated the PbS QDs/V-MoS 2 nanosheets hybrid detector and demonstrated their potential for high-performance broadband photodetectors. The response wavelength of the hybrid detector extends from the visible band to the near-infrared band. The responsivity of the hybrid detector reaches 1.46 A W −1 under 1450 nm illumination. The combination of 3D MoS 2 nanosheets and QDs further improves the performance of MoS 2 -based photodetector devices. We believe that the proposed zero-dimensional QDs and 3D vertical nanosheets hybrid structure broadband photodetector provides a promising way for the next-generation optoelectronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology