The Co-film-thickness Dependent Lateral Photoeffect in Co-SiO_2-Si Metal-Oxide-semiconductor Structures

Shilin Xiao,H. Wang,Zhiwei Zhao,Yu Gu,Yuxing Xia,Z. H. Wang
DOI: https://doi.org/10.1364/oe.16.003798
IF: 3.8
2008-01-01
Optics Express
Abstract:We report a transient lateral photoeffect (LPE) in thin metallic Co films deposited on n-type Si substrates with native SiO(2) surfaces. Under the nonuniform irradiation of a laser beam, the lateral phtovoltage (LPV) shows high sensitivity to the laser position in the metal film plane. This effect can be interpreted by the metal-semiconductor (MS) junction formed between metal and semiconductor. The LPV depends significantly on the thickness of Co film. The position sensitivity shows a peak value of 42.6 mV/mm for Co(2.8mn)-SiO(2)-Si and decreases greatly with the increase of the Co film thickness. We explain that by the shorting effect of the metallic film.
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