Abstract:Though separate studies on the individual properties of photovoltage and magnetoresistance (MR) have made much progress, work integrating the two phenomena into one kind of structure has not been reported so far. This study combines MR and lateral photovoltage (LPV) in a magnetic oxidized film Co3Mn2O deposited on an n-type Si substrate with a native ultrathin SiO2 surface by sputtering. The effective resistance shows a marked transition for temperature around 240 K. Both negative MR {MR = [R(H)- R(0)]) R(0) x 100%} of - 11% at 4.2K and a large positive MR of 70% at 300 K at a magnetic field of 6 T were observed. This phenomenon can be explained by the conducting channel switching from the upper film to the Si inversion layer. Under the nonuniform illumination of a laser beam, the LPV shows a high sensitivity to the spot position on the Co3Mn2O film plane. The current - voltage (I-V) characteristic of the Co3Mn2O) SiO2) Si metal - oxide - semiconductor (MOS) structure exhibits rectifying I-V behavior, which suggests that the lateral photoeffect (LPE) can be interpreted in terms of the metal - semiconductor (MS) junction that exists between the magnetic film and silicon substrate. When an external magnetic field is applied perpendicular to the film, the LPV shows a monotonic increase with increasing magnetic field. The variation of LPV reaches 93.2% at 2 T. This intriguing effect may be due to the Lorentz force acting on the photo-generated carriers.

Magnetically Modulated Laser-Induced Resistance Effect Observed in Metal-Oxide-Semiconductor Structure of Cr/SiO(2)/Si.

Using Laser to Trigger a Large Positive Magnetoresistive Effect in Nonmagnetic Si-based Metal-Oxide-semiconductor Structure

Using Laser to Modulate A Linear Resistance Change in Cu2o/Si Heteroepitaxial Junction

Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS2/p-Si Interface

Correlation of magnetoresistance and lateral photovoltage in Co<sub>3</sub>Mn<sub>2</sub>O/SiO<sub>2</sub>/Si metal–oxide–semiconductor structure

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

Lateral Photovoltaic Effect and Magnetoresistance Observed in Co–SiO2–Si Metal–oxide–semiconductor Structures

Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO(2)/Si.

Dual Modulated Lateral Photoresistance Effect Observed on Silicon‐Based Discontinuous Copper Film

Amplification of Magnetoresistance of Magnetite in an Fe3O4–SiO2–Si Structure

Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance

Voltage-controlled Magnetoresistance of Magnetite Film in Fe3O4/Si Structure at Room Temperature

Photoinduced effect on carrier transport properties in La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/Si heterostructure

Laser‐Triggered Large Magnetoresistance Change Observed in Corbino Disk of Cu/SiO2/Si

Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures

Sensitive Photoelectric Response to Magnetic Field in p-Type Silicon-Based Structures

Nonvolatile Resistance Effect Modulated by Pulse with Laser Observed in Nano-Carbon Film

Large Lateral Photoeffect Observed in Metal–semiconductor Junctions of CoxMnyO Films and Si

Laser-Induced Abnormal Cryogenic Magnetoresistance Effect in a Corbino Disk

Giant linear magnetoresistance in half-metallic Sr2CrMoO6 thin films

Bias-Induced Offset Effect Overlapped On Bipolar-Resistance Effect Based On Co/Sio2/Si Structure