Abstract:Though separate studies on the individual properties of photovoltage and magnetoresistance (MR) have made much progress, work integrating the two phenomena into one kind of structure has not been reported so far. This study combines MR and lateral photovoltage (LPV) in a magnetic oxidized film Co3Mn2O deposited on an n-type Si substrate with a native ultrathin SiO2 surface by sputtering. The effective resistance shows a marked transition for temperature around 240 K. Both negative MR {MR = [R(H)- R(0)]) R(0) x 100%} of - 11% at 4.2K and a large positive MR of 70% at 300 K at a magnetic field of 6 T were observed. This phenomenon can be explained by the conducting channel switching from the upper film to the Si inversion layer. Under the nonuniform illumination of a laser beam, the LPV shows a high sensitivity to the spot position on the Co3Mn2O film plane. The current - voltage (I-V) characteristic of the Co3Mn2O) SiO2) Si metal - oxide - semiconductor (MOS) structure exhibits rectifying I-V behavior, which suggests that the lateral photoeffect (LPE) can be interpreted in terms of the metal - semiconductor (MS) junction that exists between the magnetic film and silicon substrate. When an external magnetic field is applied perpendicular to the film, the LPV shows a monotonic increase with increasing magnetic field. The variation of LPV reaches 93.2% at 2 T. This intriguing effect may be due to the Lorentz force acting on the photo-generated carriers.

Sensitive Photoelectric Response to Magnetic Field in p-Type Silicon-Based Structures

Magnetically Tuned Photoelectric Response Observed in Nanoscale Co-SiO2-Si Structures.

Magnetic-Field Effect In Organic Photoconductive Devices Studied By Time-Of-Flight

Potential Superiority of P-Type Silicon-Based Metal–Oxide–Semiconductor Structures over N-Type for Lateral Photovoltaic Effects

Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

Organic Magnetic-Field Effect Examined in Frequency Domain and Time Domain

THE STUDY OF LATERAL PHOTOVOLATIC EFFECT IN SILICON-BASED PHOTOETCHING NANO-METAL STRUCTURE

Lateral Photovoltaic Effect in P-Type Silicon Induced by Surface States

Electric-Induced Nonvolatile Enhancement of Lateral Photovoltaic Effect Observed in Chromium Nanofilm

Sensitive Photodetection Based on the Surface States of P-Type Silicon

Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS2/p-Si Interface

Enhanced Lateral Photovoltaic Effect Observed in the Structure of Ag/MoS2 Quantum Dots/n-Type Silicon

Lateral Photovoltaic Effect and Magnetoresistance Observed in Co–SiO2–Si Metal–oxide–semiconductor Structures

Correlation of magnetoresistance and lateral photovoltage in Co<sub>3</sub>Mn<sub>2</sub>O/SiO<sub>2</sub>/Si metal–oxide–semiconductor structure

Enhanced lateral photovoltaic effect observed in the structure of Ag/MoS<sub>2</sub> quantum dots/n-type Silicon

Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures

Magnetostriction‐strain‐induced Enhancement and Modulation of Photovoltaic Performance in Si‐p–n/TbxDy1−xFe2 Composite

Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures

Magnetic Field Controllable Nonvolatile Resistive Switching Effect in Silicon Device

A Laser and Electric Pulse Modulated Nonvolatile Photoelectric Response in Nanoscale Copper Dusted Metal‐Oxide‐Semiconductor Structures

Lateral Thermo-magneto-optoelectronic Effects in a 3C-SiC Nanothin Film on the Si Heterojunction