Abstract:Although various van der Waals stacking systems for preparing multifunctional devices are reported, their complexity in fabrication and/or inflexibility in reversible operation limit the possibility of multifunctional integrations and the requirement of the fast‐growing internet of things paradigm. Here, a simple and effective rapid temperature annealing strategy for reversibly controlling and optimizing the electronic properties of MoTe2‐based heterostructure electronics is proposed/realized. Van der Waals (vdW) heterostructures—in which layered materials are purposely selected to assemble with each other—allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet‐of‐things applications. Here, an O2‐ultrasensitive MoTe2 material and an O2‐insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge‐polarity control for multioperation‐mode transistors through a simple and effective rapid thermal annealing strategy under dry‐air and vacuum conditions. The charge‐polarity control (i.e., doping and de‐doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2/SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti‐ambipolar transfer characteristics. Based on the dynamic control of the charge‐polarity properties, an inverter, output polarity controllable amplifier, p‐n diode, and ternary‐state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.

Van Der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

A van der Waals pn heterojunction with organic/inorganic semiconductors

Reversible Charge‐Polarity Control for Multioperation‐Mode Transistors Based on van der Waals Heterostructures

Multifunctional High-Performance Van Der Waals Heterostructures.

Ferroelectric Polarization‐Mediated Modulation of Optical Properties in 2D van der Waals Architectures

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Atomically Thin Twisted Heterostructure Optoelectronics Enhanced via vdW Interface Engineering

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures

High-performance, multifunctional devices based on asymmetric van der Waals heterostructures

Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures

Ferroelectrically controlled electromagnetic and transport properties of VN2H2/Al2O3 van der Waals multiferroic heterostructures

Dielectric engineering enable to lateral anti-ambipolar MoTe 2 heterojunction

Chemical Dopant-Free Controlled MoTe2/MoSe2 Heterostructure Toward a Self-Driven Photodetector and Complementary Logic Circuits.

Controllable Photocurrent Generation in Lateral Bilayer MoS2-WS2 Heterostructure

Disposition of [14C]secalonic acid D in male mice.

Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions

Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns

Ferroelectric-tuned Van Der Waals Heterojunction with Band Alignment Evolution

First-principles investigations of the controllable electronic properties and contact types of type-II MoTe2/MoS2 van der Waals heterostructure