Abstract:A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal–organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Study on Patterned Sapphire Substrate by Wet Etching

Fabrication of Volcano-Shaped Nano-Patterned Sapphire Substrates Using Colloidal Self-Assembly and Wet Chemical Etching

Design of patterned sapphire substrates for GaN-based light-emitting diodes

Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition

Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate

Application of patterned sapphire substrate for III-nitride light-emitting diodes.

Influence of Pillar- and Hole- Patterned Sapphire Substrates on Movpe Grown Gan Bulk and Led Structures

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates

Fabrication of the Patterned Sapphire Substrate by the Imprint Lithography with the Flexible Hybrid Mold

[Optical Characteristics of InGaN/GaN Light Emitting Diodes on Patterned Sapphire Substrate].

Fabrication of Wafer-Scale Nanopatterned Sapphire Substrate Through Phase Separation Lithography

Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal-organic vapor phase epitaxy

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Analyses of Light Extraction Efficiency in GaN‐based LEDs Grown on Patterned Sapphire Substrates

Effect of Template–Mediated Alumina Nanoparticle Morphology on Sapphire Wafer Production via Heat Exchange Method