Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Analysis of Trigger Behavior of High Voltage LDMOS under TLP and VFTLP Stress

Trigger voltage walk-in effect of ESD protection device in HVCMOS

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Trigger voltage walk-out phenomenon in SOI lateral insulated gate bipolar transistor under repetitive electrostatic discharge stresses

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Characterization analysis of UDSM LVTSCR under TLP stress

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

Novel Substrate Trigger SCR-LDMOS Stacking Structure for High-Voltage ESD Protection Application

An Improved Ggnmos Triggered Scr for High Holding Voltage Esd Protection Applications

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Effects of process variation on turn-on voltages of a multi-finger gate-coupled NMOS ESD protection device

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

High Holding Voltage SCR-LDMOS Stacking Structure with Ring-Resistance-Triggered Technique

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

A Novel SCR-LDMOS for High Voltage ESD Protection.