Poly-SiGe-Based MEMS Thin-Film Encapsulation
Bin Guo,Bo Wang,Lianggong Wen,Philippe Helin,Gert Claes,Jeroen De Coster,Bert Du Bois,Agnes Verbist,Rita Van Hoof,Guy Vereecke,Luc Haspeslagh,Harrie A. C. Tilmans,Stefaan Decoutere,Haris Osman,Robert Puers,Ingrid De Wolf,Shuji Tanaka,Simone Severi,Ann Witvrouw
DOI: https://doi.org/10.1109/jmems.2011.2170823
IF: 2.829
2012-01-01
Journal of Microelectromechanical Systems
Abstract:This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 mm(2) and different sealed-in pressures (similar to 100 kPa and similar to 2 kPa) are demonstrated. The use of a porous cover on top of the release holes avoids deposition inside the cavity during sealing, but leads to a sealed-in pressure of approximately 100 kPa, i.e. atmospheric pressure. Vacuum (similar to 2 kPa) sealing has been achieved by direct deposition of a sealing material on the SiGe capping layer. Packaged functional accelerometers sealed at around 100 kPa have an equivalent performance in measuring accelerations of about 1 g compared to a piezoelectric commercial reference device. Vacuum-sealed beam resonators survive a 1000 h 85 degrees C/85% RH highly accelerated storage test and 1000 thermal cycles between -40 degrees C and 150 degrees C. [2011-0131]