Abstract:Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly. Most of the existing crosstalk suppression methods are aimed at decreasing the crosstalk voltage introduced by the parasitic gate-drain capacitance (Miller capacitance), ignoring the influence of other parasitic parameters on the crosstalk voltage, such as the common source inductance, which may also lead to more serious reliability problems. Thus, this paper firstly establishes the mathematical model of the switching process of the SiC MOSFET half-bridge inverter. Then, the effects of various parasitic parameters (the gate-source capacitance, the gate-drain capacitance, the common source inductance, the gate inductance, the drain inductance) on the crosstalk voltage are analyzed and modeled in detail, which is verified by experiments. Based on the analyses and models, a novel crosstalk voltage suppression circuit is proposed, which can not only suppress the crosstalk caused by the gate-drain capacitance, but also solve the crosstalk issue considering the influence of other parasitic parameters, such as the common source inductance. Finally, a double pulse test platform is established to verify the effectiveness of the designed crosstalk suppression circuit under different voltage/current conditions.

Modeling of power MOSFET for analysis of CdV/dt induced effects

Modeling Effects of Velocity Overshoot in Extremely Scaled MOSFETs

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

A Coupled 3D Finite Element-Circuit Model for the Numerical Analysis of Small Time Scale Transients of an Insulated Gate Bipolar Transistor Power Electronics Device

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

A Semiphysical Semibehavioral Analytical Model for Switching Transient Process of SiC MOSFET Module

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

An Improved Equivalent Circuit Model of SiC MOSFET and Its Switching Behavior Predicting Method

Modeling of SiC MOSFET with temperature dependent parameters and its applications

A Temperature-Dependent Analytical Model of SiC MOSFET Short-Circuit Behavior Considering Parasitic Parameters

A comprehensive study on the gate-loop stability of the SiC MOSFET

Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

Analytical Transient Model of Commutation Units with SiC MOSFET and SiC SBD Pair

SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations