Abstract:The degradation of electrical parameters for SiC power metal–oxide–semiconductor field-effect transistors (MOSFETs) under repetitive switching stress is investigated in detail. The dominant degradation mechanism is demonstrated to be the injection of negative charges into the gate oxide interface along the channel. It results in the increase in threshold voltage ( $V_{mathrm {th}}$ ) and the increase in ON-state resistance ( $R_{mathrm {dson}}$ ) under low gate bias condition. Furthermore, the influences of different stages during an entire switching process on the degradation trend of the device are verified. It is found that the charges are mainly injected into the gate oxide during the conduction stage. Even though the turn-on stage rarely results in the injection directly, it increases the junction temperature ( $T_{j}$ ), contributing to the injection of charges during the conduction stage. However, the turn-off stage barely degrades the performance of the device. The research also proves the robustness of SiC power MOSFETs under repetitive out-of-safe operating area (SOA) switching conditions. Moreover, the degradation of switching behaviors of the device is analyzed. The increased $V_{mathrm {th}}$ increases the Miller plateau voltage ( $V_{mathrm {gp}}$ ), leading to the increase in turn-on time and the decrease in turn-off time. Hence, the turn-on dissipated energy ( $E_{mathrm {on}}$ ) increases, while the turn-off dissipated energy ( $E_{mathrm {off-}$ ) decreases after enduring the stress.

A comprehensive study on the gate-loop stability of the SiC MOSFET

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Impact of Gate-Loop Parameters on the Switching Behavior of SiC MOSFETs

Study on gate‐source voltage oscillation suppression in SiC MOSFETs based on LCR parallel branch

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

Active Gate Drive Circuit with Auxiliary Drive Branch for SiC MOSFET

Turn-on Gate Resistor Optimization for Paralleled SiC MOSFETs

Stability Analysis and Improvement for SSCB With Single-Gate Controlled Series-Connected SiC MOSFETs

Modelling and Failure Analysis of SiC MOSFET under the Effects of Parasitic Parameters

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Simultaneous Mitigation of Switching Overvoltage and Oscillation for SiC MOSFET via Gate Charge Injection Concept

Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Understanding switching losses in SiC MOSFET: Toward lossless switching

Analysis of Gate Signal Interference in an Integrated SiC MOSFET Module

Analytical Modeling of SiC MOSFET During Switching Transient

Analytical Model and Design of Voltage Balancing Parameters of Series-Connected SiC MOSFETs Considering Non-Flat Miller Plateau of Gate Voltage