Abstract:With the advantages of higher blocking voltage, higher operation temperature, fast-switching characteristics, and lower switching losses, the silicon carbide (SiC) MOSFET has attracted more attentions and become an available replacement of traditional silicon (Si) power semiconductor in applications. Despite of all the merits above, electromagnetic interference (EMI) issues will be induced consequently by the ultra-fast switching transitions of the SiC MOSFET. To quickly and precisely assess the switching behaviors of the SiC MOSFET for EMI investigation, an analytical model is proposed. This model has comprehensively considered most of the key factors, including parasitic inductances, non-linearity of the junction capacitors, negative feedback effect of L, and C-gd shared by the power and the gate stage loops, non-linearity of the trans-conductance, and skin effect during voltage and current ringing stages, which will considerably affect the switching performance of the SiC MOSFET. Additionally, a finite-state machine (FSM) is especially utilized so as to analytically and intuitively describe the switching behaviors of the SiC MOSFET via State-flow. Based on double pulse test (DPT), the effectiveness and correctness of the proposed model are validated through the comparison between the calculated and the measured waveforms during switching transitions. Besides, the model can appropriately depict the spectrum of the drain-source voltage of the MOSFET and is suitable for EMI investigation in applying of SiC devices.

Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

A comprehensive study on the gate-loop stability of the SiC MOSFET

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

SiC MOSFET threshold-stability issues

Modeling of SiC MOSFET Behavior in Short-circuit Transient Considering Gate Leakage Current

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Analytical Modeling of SiC MOSFET During Switching Transient

Analytical Modeling of the Silicon Carbide (sic) MOSFET During Switching Transition for EMI Investigation

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Analytical Model to Study Hard Turn-off Switching Dynamics of SiC mosfet and Schottky Diode Pair

Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design

Mechanisms of negative bias instability of commercial SiC MOSFET observed by current transients

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress