Abstract:Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change materials as well as their extreme conductivity dependence on both electric field and temperature into a set of self-consistently-solved thermoelectric and phase-field partial-differential equations. However, demonstrations of the ability of such models to match actual experimental results are rare. In addition, such PCM devices also require a so-called selector device - such as an Ovonic Threshold Switching (OTS) device - in series for proper memory operation. However, monolithic simulation of both the PCM and OTS selector device in a single simulation is largely absent from the literature, despite its potential value for material- and design-space explorations. It is the goal of this work to first characterize a PCM device in isolation against experimental data, then to demonstrate the qualitative behavior of a simulated OTS device in isolation and finally to perform a single monolithic simulation of the PCM + OTS device within the confines of a commercially available TCAD solver: GTS Framework.

Self-consistent Simulation of PRAM with Comprehensive Physical Models

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

Simulation of Retention Behavior for the Phase Change Memory

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

HSPICE Macromodel of PCRAM for Binary and Multilevel Storage

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

Modeling of Transient Thermal Dissipation of Nanoscale Phase-Change Memory Cells in the Pulse Domain

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Modeling and Simulation of RRAM with Carbon Nanotube Electrode

A physical based analytic model of RRAM operation for circuit simulation

Simulation of serial RRAM cell based on a Verilog-A compact model

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell