Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

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Improved carrier transport and photoelectric properties of InGaN/GaN multiple quantum wells with wider well and narrower barrier

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Hole Transport Assisted by the Piezoelectric Field in In0.4Ga0.6N/GaN Quantum Wells under Electrical Injection

Modified Ingan/Gan Quantum Wells with Dual-Wavelength Green-Yellow Emission

Device Simulation on GaN‐LED Operating in Noncarrier Injection Mode for Performance Improvement by Enhancing the Tunneling Effect in Multiquantum Wells

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

Injection Current Dependences of Electroluminescence Transition Energy in Ingan/Gan Multiple Quantum Wells Light Emitting Diodes under Pulsed Current Conditions (vol 118, 033101, 2015)

Electroluminescence Property Improvement by Adjusting Quantum Wells’ Position Relative to P-Doped Region in InGaN/GaN Multiple-Quantum-well Light Emitting Diodes

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High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Characterization of Asymmetric Gan/Ingan Multiple Quantum Well

Study on Carrier Transportation in InGaN Based Green LEDs with V-pits Structure in the Active Region

Effect of P–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Efficiency Droop Reduction In Ingan/Gan Light-Emitting Diodes By Graded-Thickness Multiple Quantum Wells

Improving the Internal Quantum Efficiency of Green Ingan Quantum Dots Through Coupled Ingan/Gan Quantum Well and Quantum Dot Structure

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays