High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Yuan Li,Zhiheng Xing,Yulin Zheng,Xin Tang,Wentong Xie,Xiaofeng Chen,Wenliang Wang,Guoqiang Li
DOI: https://doi.org/10.1039/c9tc06138j
IF: 6.4
2020-01-01
Journal of Materials Chemistry C
Abstract:High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.
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