Abstract:Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed. In this work, the particle swarm optimization (PSO) algorithm is used to design direct-band Si-Ge alloys. The findings of phonon computations demonstrate that all these structures are dynamically stable. In addition, ab initio molecular dynamics and elastic constant calculations are carried out, with results indicating these structures are thermodynamically stable at 300 K as well as being mechanically stable. All of these materials exhibit semiconductor behavior with band gaps of 1.03, 0.68 and 1.37 eV for α, β and γ phases, respectively, at the HSE06 level. The results of effective mass and mobility of carriers that are important in applications show that holes are more easily transported in all structures but that the higher concentration of holes, the lower the carried mobility. Different concentrations of holes n_h lead to different limits to the scattering process. When n_h is lower than the value of around 〖10〗^16 cm^(-3), deformation potential scattering is dominant, while the ionized impurity scattering process limits overall mobility when n_h is higher than such a value. Finally, the absorption spectra display that both α and β phases have isotropic optical properties in the X- and Y- directions while strong anisotropy can be seen in the Z-direction. However, the γ phase exhibits no notable isotropy. This investigation finds three direct-band and potentially CMOS compatible materials, which will benefit the development of high efficiency emitter or solar cells.

Enhanced Photoluminescence of Strained Ge with a Δ-Doping SiGe Layer on Silicon and Silicon-on-insulator

Direct bandgap emission from strain-doped germanium

Direct-Bandgap Electroluminescence from Germanium with Subband Engineering Utilizing a Metal-Oxide-Semiconductor Structure

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Strain-Induced Enhancement of Electroluminescence from Highly Strained Germanium Light-Emitting Diodes

Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator

Dislocation-related electroluminescence of silicon after electron irradiation

Novel Room Temperature Photoluminescence of Ge/Si Islands in Multilayer Structure Grown on Silicon-On-Insulator Substrate

Photoluminescence spectra from SiGe/Si strained layer quantum well structure

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Strained Germanium LED with SiN Stressor and Microbridge based on Edge Stress Concentration

1530-nm electroluminescence from <i>p</i>-Ga<sub>2</sub>S<sub>3</sub>:Er/<i>n<SUP>+</SUP></i>-Si heterojunctions induced by Zener tunneling

Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities

A new direct band gap Si-Ge allotrope with advanced electronic and optical properties

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence