Abstract:Beyond the 25 nm technological node, MOSFETs (metal oxide semiconductor FETs) have worse channel electrostatic control than FinFETs (Fin field-effect transistors). It is necessary to use novel gate and channel engineering architecture in MOSFET devices at low technology nodes to decrease short-channel effects (SCEs). Future nano devices will replace present MOSFET with graded channel double gate MOSFETs and FinFETs for increased ION current and reduced leakage currents. Double gate MOSFETs have been identified by researchers in the last few years to considerably reduce short channel effects (SCE). Graded channel double gate MOSFETs provide superior switching characteristics and higher transconductance than single gate MOSFETs in ULSI/VLSI applications with many nodes. Transistors with hot carrier effects and subthreshold properties degrade at lower technological nodes than 25 nm. To increase on-state drive current and off-state leakage current separately in the gate-to-channel direction, super-halo and retrograde channel doping are used. As a result, semiconductor businesses must place a premium on precise doping levels, which drives up fabrication costs enormously. A revolutionary doping-free Silicon nanotube FET (DF-Si-NT-FET) with sub-nm technology nodes is presented in this paper. They are extremely resistant to SCE due to the strong charge control offered by both the inner and outside channels. Also, machine learning (ML) algorithm used with high-density meshing during simulation. TCAD was used to create all the simulations for this work.

A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology

Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate Mosfets

Dual Material Gate SOI MOSFET with a Single Halo

Analysis and Optimization of Sub-100 Nm NMOS with Halo

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

Performance and Analytical Modelling of Halo-Doped Surrounding Gate Mosfets

Simulation and Analysis of Ultra Deep Sub-Micron Asymmetrical Halo LDD Low Power Device

Analysis and Design of Novel Doping Free Silicon Nanotube TFET with High-density Meshing Using ML for Sub Nanometre Technology Nodes

Performance Analysis of an Ultralow Power Circuit Using Single Halo CNTFETs

Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

The Effect of Halo Implantation on the Performance of 50 nm NMOS Device

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Influence of Halo Implantations on the Total Ionizing Dose Response of 28 nm pMOSFETs Irradiated to Ultra-High Doses

The Simulation and Analysis of Hot Carrier Effect in LDD MOS

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile

Current modeling and simulation of dual-material surrounding-gate MOSFET with asymmetric halo

Optimization Of A Sub 0.1-Mu M Asymmetric Halo Soi-Mosfet For High Performance Digital Applications