Abstract:This work presents a comprehensive study of the influence of channel engineering on the switching, high frequency characteristics, and circuit-level performance of carbon nanotube field-effect transistors (CNTFETs). At the device level, new CNTFETs with single halo doping (SH-CNTFETs) have been proposed. The impact of SH implantation on the cutoff frequency (fT), switching delay (τ), and on/off current ratio (Ion/Ioff) has been explored and it is revealed that SH-CNTFETs have improved radio frequency (RF) and switching characteristics. At the circuit level, using the Hailey Simulation Program with IC Emphasis (HSPICE) with lookup table (LUT)-based Verilog-A models, the performance parameters of the circuit have been calculated. Results show that compared to a conventional CNTFET (C-CNTFET)-based inverter, the SH-CNTFET-based inverter exhibits better performance. In addition, we evaluate the stability and performance of six-transistor (6T) CNTFET static random access memory (SRAM) cells with SH-CNTFETs. The performance parameters such as static noise margin (SNM) and write delay as well as power-delay product (PDP) and SNM/write delay (SWD) have been calculated and optimized. It is shown that SH-CNTFET SRAMs have an improved performance in SNM, PDP, and write power compared to C-CNTFET SRAMs and the optimum halo doping level has been concluded. Our results may be useful for designing and optimizing CNTFET devices and circuits.

Analysis and Optimization of Sub-100 Nm NMOS with Halo

The Effect of Halo Implantation on the Performance of 50 nm NMOS Device

Optimization Of A Sub 0.1-Mu M Asymmetric Halo Soi-Mosfet For High Performance Digital Applications

Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate Mosfets

Performance and Analytical Modelling of Halo-Doped Surrounding Gate Mosfets

Optimized Design of HCE Degradation Induced by Tilt of Halo

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Analytical Model for Threshold Voltage of Hetero-Gate SOI MOSFET with Asymmetric Halo

Simulation and Analysis of Ultra Deep Sub-Micron Asymmetrical Halo LDD Low Power Device

Dual Material Gate SOI MOSFET with a Single Halo

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Analytical Modeling and Simulation of Dual-Material Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors with Single-Halo Doping

A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Performance Analysis of an Ultralow Power Circuit Using Single Halo CNTFETs

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

An analytical threshold voltage model of halo-implanted MOSFETs

Influence of Halo Implantations on the Total Ionizing Dose Response of 28 nm pMOSFETs Irradiated to Ultra-High Doses

Two-dimensional model of fully depleted dual-material-gate single-halo SOI MOSFET

Design Optimization of High Performance Strained SOI Dynamic Threshold MOSFET's

CMOS Technology for the Nanometer Regime