Microcantilever Humidity Sensor Based On Embedded Nmosfet With < 100 >-Crystal-Orientation Channel

Jianye Wang,Wengang Wu,Yiping Huang,Yi Long Hao
DOI: https://doi.org/10.1109/ICSENS.2009.5398547
2009-01-01
Abstract:This paper reports a novel silicon microcantilever sensor with an embedded n-type metal-oxide semiconductor field-effect transistor (nMOSFET) for the detection of relative humidity (RH) based on the surface stress sensing principle. The nMOSFET has a channel along < 100 > crystal orientation of (100) silicon, which is parallel to the microcantilever. The RH detection is realized by coating a thin gold film on the bottom surfaces of the microcantilevers and then a self-assembled monolayer of 4-mercaptobenzoic acid on the film. The output voltage of the sensor as a function of RH is linear, and the sensitivity is up to 4.38 mV/1% RH at room temperature.
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