Abstract:In the RF area MEMS devices are mainly used as switches that utilize mechanical movement to achieve a short or an open circuit in a RF transmission line. RF MEMS switches have shown great potential for the development of a wide range of low loss, low power and low cost systems. It is widely recognized that the advantages offered by the MEMS switch technology cannot be achieved without an appropriate package that will shield and protect the switch, as well as an interconnect technology that will allow for easy RF and DC signal transition in and out of the package. Low loss, wide bandwidth hermetic packages are therefore essential for practical high performance RF MEMS devices. The interconnection to such packaging techniques presents the largest challenge to RF performance. For an interconnection to function largely independent of frequency, the impedance. of the interconnection must be maintained throughout the bonding interface. Although it is used very common in packaging ICs for its characteristics such as simplicity and low cost, wire bonding can not fulfil the requirement of RF MEMS packaging because of the defection existing in the package [1].In this paper, we present the design, simulation and manufacturing of a package solution with lightweight, small size and short electric path length for a millimeter wave MEMS switch structure. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes for vertical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. To make up hermetic sealing, metal bonding was used in the sealing line. The switch before and after packaging were simulated by using Ansoft HFSS respectively, and S-parameters simulated show that the package structure has a small impact on the performance of switch, so that we can package the MEMS devices without loss and interference by using the vertical feed-through. Especially, by using the ultra thin silicon wafer we can realize a device package with low-cost, lightweight and small size. In addition, we can extend a 3-D packaging structure by stacking assembled thin packages.

Design And Simulation Of A Package Solution For Millimeter Wave Mems Switch

RFCharacteristic Andmodeling Oftherfmems Switch Packaging

Research status of wafer level packaging for RF MEMS switches

A Novel Wafer Level Package Strategy For Rf Mems

Packaging and Feedthrough Modes of Wafer Level for Rf Mems Switches

Wafer-Level Packaging Method For Rf Mems Applications Using Pre-Patterned Bcb Polymer

Wafer Level Micropackaging for RF MEMS Switches

Monolithic Integration of a Wafer-Level Thin-Film Encapsulated mm-Wave RF-MEMS Switch in BEOL of a 130-nm SiGe BiCMOS Technology

Bonding Packaging Of A Sp4t Rf Mems Switch

Effects of Packaging on Rf Mems Switch'S Return Loss

RF Characteristic and Modeling of the RF MEMS Switch Packaging

Design and Consideration of Wafer Level Micropackaging for Distributed RF MEMS Phase Shifters

Development and Modeling of a Wafer-Level BCB Packaging Method for Capacitive RF MEMS Switches

Packaging of RF Mems Switching Functions on Alumina Substrate

A Pre-Shaped Wafer Level Packing Strategy for Rf Mems

Integration of RF MEMS and CMOS IC on a Printed Circuit Board for a Compact RF System Application Based on Wafer Transfer

High-reliability Circular-Contact RF MEMS Switches in Silicon Hermetic Package

Wafer Level Micropackaging for Distributed Mems Phase Shifters

On-wafer level packaging of RF MEMS devices for Ka-band applications

Computer-Aided Design of RF-MEMS Switch

Wafer level micropackaging based on Ka band distributed MEMS phase shifters