Bonding Packaging Of A Sp4t Rf Mems Switch

Hu Guangwei,Liu Zewen,Qiao Yi,Hou Zhihao,Cai Jian,Liu Litian,Li Zhjian
DOI: https://doi.org/10.1109/ICEPT.2006.359869
2006-01-01
Abstract:A study on bonding packaging of a SP4T series MEMS switch with metal-to-metal contact is presented. The switch, with the total die size of 3580 mu m x2740 mu m, consists of a coplanar waveguide (CPW), SiON dielectric bridge membranes and broadside actuation electrodes. In order to protect the movable structures from the mechanical damage as well as the particle contaminations, a high-resistivity silicon cap with a rectangular cavity of 50 mu m depth is designed, fabricated via etching in KOH solution at 80 degrees C, and bonded on top of the switch with epoxy resin. The results show the bonding between the cap and the switch support substrate is mechanically robust and the degradation of the isolation is in the range of 5%-10% in the frequency band from 1-10 GHz.
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