Novel millimeter wave power-combining system in 3-D packaging level

Xianfeng Wang,Zhiguo Shi,Kangsheng Chen

DOI: https://doi.org/10.1109/ICEPT.2010.5582839

2010-01-01

Abstract:This paper presents a novel millimeter wave power-combining system which can be fabricated with modern packaging technology and compatible with CMOS process. The system is comprised of a silicon integrated waveguide (SIW) resonator coupled with numerous λ/4 standing wave resonators, all of which can be fabricated by using via holes in 3-D packaging level. The coupling between the SIW resonator and the λ/4 standing wave resonators can be fabricated by eroding slots in the metal layer. An example system operating at 77GHz is illustrated and simulation results of electromagnetic field distribution in the SIW resonator and around the λ/4 standing wave resonators from professional electromagnetic simulation tool are presented. It is shown that the resonant frequency and phase of these λ/4 standing wave resonators are controlled by the SIW resonator and the power of all these λ/4 standing wave resonators can be combined in the SIW resonator. The SIW resonator operates in TE102 mode and has a quality factor of more than 500, which is much higher than that of each independent λ/4 standing wave resonators with quality factor of about 150. Thus the proposed power-combining system fabricated in packaging level can work effectively and features a lower loss and high quality factor.