Abstract:One-step metal-assisted chemical etching (MACE) was used to fabricate porous silicon nanowire arrays. Also, the effects of doping level, AgNO3 concentration, and HF concentration on the morphology and structure of porous silicon nanowire were investigated. The results show that the higher doping level is beneficial for etching the silicon wafer and forming silicon nanowire arrays. This is because the higher doping level introduces more impurities and defects on the surface of the silicon wafer, and at the same time, the Schottky barrier between the silicon wafer with the higher doping level and the solution is lower. Thus, the silicon wafer is easier to oxidate to form nanowire arrays. The AgNO3 concentration plays a critical role in the fabrication of the porous silicon nanowire arrays during the one-step MACE process. If AgNO3 concentration is too low or too high, corrosion pits and collapsed clusters of nanowires could form on the surface of the silicon wafer. When AgNO3 concentration was 0.02 mol·L-1, silicon nanowires grew and became longer, eventually forming a porous array of silicon nanowire. In the meantime, as silicon nanowires grew, capillary stress between nanowires caused agglomeration at the top of some nanowires. Furthermore, when HF solution concentration exceeded 4.6 mol·L-1, the length of silicon nanowire increased with increasing HF concentration. Furthermore, a porous structure was formed on top the silicon nanowire, and the porosity of the silicon nanowires increased with increasing HF concentration. This was due to a large number of Ag+ random nucleations at the top of the nanowires, and lateral etching of the silicon nanowires occurred. In the end, the formation process of the porous silicon nanowires is explained by a model based on the experimental phenomena. It is attributed to the deposition of silver ions and the oxidation of dissolved silicon substrates.

Influence of electrochemical anodization conditions on arrayed porous silicon

Influence Of Anodization Current Density On Preparation And Corrosion Of N-Type Macroporous Silicon In 1.0 M Naoh

Porous Silicon Nanowire Arrays Fabrication Through One-Step Metal-Assisted Chemical Etching

Influences of Temperature and Etching Voltage on the Surface Morphology of Photo-Electro-Chemical Etching for Silicon Microchannel Arrays

Influence of Surfactant on Aperture of Photo-Electro-chemical Etching for Silicon Microchannel Plate

Optimization of anodic current density for growth of thick p-type macropore porous silicon

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Al-assisted Anodic Etched Porous Silicon

I-V characterization study of porous silicon formation by doubled-cell electrochemical etching

Porous Si (111) Fabrication Using Electrochemical Anodization: Effects of Electrode Distance and Current Density

Controllable Fabrication of Silicon Nanopore Arrays by Two-Step Inductively Coupled Plasma Etching Using Self-Assembled Anodic Aluminum Oxide Mask

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Effects Of Anodization Current Density And Time On Porous Silicon Morphology And Electron Emission Characteristics

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Anodizing process of Al films on Si substrates for forming alumina templates with short-distance ordered 25 nm nanopores

A Two-Step Anodic Method to Fabricate Self-Organised Nanopore Arrays on Stainless Steel

EFFECT OF C-Si/electrolyte INTERFACE ON THE INITIAL STAGE OF POROUS SILICON FORMATION

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Anodic characteristic during anodizing of electron-beam evaporation Aluminum film on Si substrate

Formation of Si-based Nano-Island Array on Porous Anodic Alumina

Electrochemical Formation of Self-positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate