Abstract:Polymer solar cell with excellent performance is currently composed of the blend bulk-heterojunction formed by conjugated polymer as donor material and fullerene as acceptor material, among which P3HT and PCBM are most widely used. For the photoelectric thin film device, the optical and the electric characteristics of the active layer can affect the device performance directly. The optical constants of the active layer are obtained primarily based on the Forouhi-Bloomer model. According to the Fresnel coefficient matrix, the numbers of photons absorbed by different active layer thick devices are investigated by calculating electromagnetic field distributions inside this structure. To make a specific analysis of the thickness effect on dissociation probability of bound pairs without external excitation, the model of Onsager-Braun is adopted. Theoretical analysis shows that the active layer with a thickness of 100 nm can maximize photon absorption by the device without reducing the dissociation probability of excitons obviously. As a result, an optimal thickness of the active layer is about 100 nm, which is confirmed by the theoretical and the experimental results from the device with the structure of ITO/PEDOT/ P3HT:PC60BM /LiF/Al.

Active-layer thickness effects on the on-state current and threshold voltage of ZnO TFT

Effect of active layer thickness on device performance of a-LZTO thin-film transistors

The Influence of Channel Layer Thickness on the Electrical Properties of Zno Tfts

Analysis of the Effect of Active Layer Thickness on Polymer Solar Cell Performance Based on Optical and Opto-Electronic Model

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors

Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor

Influence Of Deep States In Active Layers On The Performance Of Amorphous In-Ga-Zn-O Thin Film Transistors

Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors

P‐1.14: Effects of Active Layer Thickness on Performance of InZnO Transistors

A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation

Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition

Effects of channel thickness on characteristics of HZO-TFTs fabricated at low temperature

Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer

Performance Enhancement of TiZO Thin Film Transistors by Introducing a Thin ITO Interlayer

Enhanced Electrical Properties of Dual-Layer Channel ZnO Thin Film Transistors Prepared by Atomic Layer Deposition

Effect of the ZnO buffer layer thickness on AZO film properties

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Channel thickness effect on the performance of amorphous SiZnSnO semiconductor thin-film transistor with metal capping structure

Dynamic Threshold Voltage Modulation in Double-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistors: Influence of the Active Layer Thickness

Modeling of Self-Assembled Inorganic Oxide Semiconductor Based Electric-Double-layer Thin Film Transistors