Abstract:The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I – V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

A 3d Rram Using Stackable 1txr Memory Cell For High Density Application

A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell.

A 3D Resistive Switch Memory with Stackable 1txr Cell

A Novel Three-Dimensional High Density Vertical Rram Arrays with Reduced Leakage Current

A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

Odesy: A Novel 3t-3mtj Cell Design With Optimized Area Density, Scalability And Latency

Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation

3-D Resistive Memory Arrays: from Intrinsic Switching Behaviors to Optimization Guidelines

3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-Memory

High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array with Stacked 1D2R RRAM Array

RRAM-Based Single Device for Vector Multiplication and Multibit Storage with Ultrahigh Area Efficiency

Resistive Switching Memory for High Density Storage and Computing*

16-Layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pa) Self-Selective Cells

A 28nm 1.5mb Embedded 1T2R RRAM with 14.8 Mb/mm2 Using Sneaking Current Suppression and Compensation Techniques

Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

Stacked 3D RRAM Array with Graphene/CNT As Edge Electrodes

3D domain wall memory-cell structure, array architecture and operation algorithm with anti-disturbance.

DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC Functionality

Compact 3-D-SRAM Memory with Concurrent Row and Column Data Access Capability Using Sequential Monolithic 3-D Integration.

Highly compact 1T-1R architecture (4F2footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting …

Design And Optimization Methodology For 3d Rram Arrays