Abstract:The inhomogeneous distributions of basal plane dislocations (BPDs) in PVT-grown 4H-SiC crystal boule due to internal stresses cause lattice plane bending, which strongly affect SiC-based device fabrication. The relationship between BPDs and local basal plane bending in 6-inch 4H-SiC substrates has been investigated. Synchrotron monochromatic beam x-ray topography (SMBXT) imaging shows black and white contrast of BPDs with Burgers vectors of opposite signs based on the principle of ray tracing. We have evaluated the net difference of BPDs with black and white contrast along both [112¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}$$\end{document}0] and [11¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{1}$$\end{document}00] radial directions on the Si face across multiple 6-inch diameter 4H-SiC substrates sliced from the same and different boules and predicted the nature (concave/convex) and amount of bending of the basal plane in these wafers. Line scans of 0008 reflection using high resolution x-ray diffractometry (HRXRD) has been carried out along the two directions to verify the nature of bending in these wafers. Results show quite different bending behavior along [112¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2} $$\end{document}0] and [11¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{1}$$\end{document}00] directions, indicating that the Si face of 6-inch substrates creates non-isotropic bending on the basal plane. These observations are correlated quite well with net BPD density analysis. The physical shapes of the wafers were also measured to be not flat due to the surface effect. Quantitative analysis of the degree of basal plane bending based on the SMBXT data was carried out and found to be correlating well with the measured tilt angle from HRXRD. Existence of a high stress center was observed in one of the 6-inch wafers resulting in severe bending which is associated with both large bending angles and abrupt changes in lattice constants a and c.

Recent Progress in Research of Structural Defects in 6H-Sic Single Crystals

Basal Plane Bending of 6H-Sic Single Crystals Observed by Synchrotron Radiation X-Ray Topography

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Amorphization and Dislocation Evolution Mechanisms of Single Crystalline 6H-SiC

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Analysis of Dislocation Structures in 4H-Sic by Synchrotron X-ray Topography

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Investigation of the 6H-Sic （0001） Surface by AFM

Contrast of Dislocations in 4H-Sic by SR Topography in Grazing-Incidence Geometry

Atomic-Scale Characterization of Slip Deformation and Nanometric Machinability of Single-Crystal 6H-SiC

Effect of Structural Anisotropy on the Dislocation Nucleation and Evolution in 6H SiC under Nanoindentation

Observation of tiny polytypes in SiC single crystal by synchrotron radiation white beam X-ray topography

Observation of Micropipes in 6H-Sic Monocrystalline by Synchrotron Radiation Monochromatic X-ray Topography

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Three-dimensional Observation of Defects in Nitrogen-Doped 6H-Sic Crystals Using a Laser Scanning Confocal Microscope

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Measurements of dislocations in 4H-SiC with rocking curve imaging

Helices in the 6H-SiC Single Crystal

Characterization of Defect Structure in Epilayer Grown on On-Axis SiC by Synchrotron X-ray Topography