Abstract:The inhomogeneous distributions of basal plane dislocations (BPDs) in PVT-grown 4H-SiC crystal boule due to internal stresses cause lattice plane bending, which strongly affect SiC-based device fabrication. The relationship between BPDs and local basal plane bending in 6-inch 4H-SiC substrates has been investigated. Synchrotron monochromatic beam x-ray topography (SMBXT) imaging shows black and white contrast of BPDs with Burgers vectors of opposite signs based on the principle of ray tracing. We have evaluated the net difference of BPDs with black and white contrast along both [112¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}$$\end{document}0] and [11¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{1}$$\end{document}00] radial directions on the Si face across multiple 6-inch diameter 4H-SiC substrates sliced from the same and different boules and predicted the nature (concave/convex) and amount of bending of the basal plane in these wafers. Line scans of 0008 reflection using high resolution x-ray diffractometry (HRXRD) has been carried out along the two directions to verify the nature of bending in these wafers. Results show quite different bending behavior along [112¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2} $$\end{document}0] and [11¯\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{1}$$\end{document}00] directions, indicating that the Si face of 6-inch substrates creates non-isotropic bending on the basal plane. These observations are correlated quite well with net BPD density analysis. The physical shapes of the wafers were also measured to be not flat due to the surface effect. Quantitative analysis of the degree of basal plane bending based on the SMBXT data was carried out and found to be correlating well with the measured tilt angle from HRXRD. Existence of a high stress center was observed in one of the 6-inch wafers resulting in severe bending which is associated with both large bending angles and abrupt changes in lattice constants a and c.

Basal Plane Bending of 6H-Sic Single Crystals Observed by Synchrotron Radiation X-Ray Topography

Basal Plane Bending of 4H-Sic Single Crystals Grown by Sublimation Method with Different Seed Attachment Methods

Investigation on Structural Defects in 6H-SiC Single Crystal by Synchrotron Radiation White-Beam Topogra-phy and X-ray Tracing Method

Spatial variation of lattice plane bending of 4H-SiC substrates

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

Recent Progress in Research of Structural Defects in 6H-Sic Single Crystals

Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface

Distribution of Basal Plane Dislocations in 4-Degree Off-Axis 4H-Sic Single Crystals

Bulk Growth and Characterization of Sic Single Crystal

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond

Observation of tiny polytypes in SiC single crystal by synchrotron radiation white beam X-ray topography

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Observation of low angle grain boundaries and micropipes in 6H-SiC single crystal by synchrotron radiation black reflection white-beam topography

Low-Angle Grain Boundaries in Sublimation Grown 6H-Sic Crystals

Analysis on Surface Morphology and Defect Generation at the Initial Stages of 6H-Sic Sublimation Growth

Birefringence Images of Micropipes Viewed End-On in 6H-Sic Single Crystals

Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Synchrotron Radiation X-Ray Absorption Fine-Structure and Raman Scattering Studies on 6H-Sic Materials

Growth and Defect Characterization of 6H-SiC Single Crystal Seeded (1015) Plane

Comparing basal and prismatic slips induced by thermal stresses in 4H-SiC crystal