Phosphorus-Doped P-Type ZnO Nanorods and ZnO Nanorod P−n Homojunction LED Fabricated by Hydrothermal Method

Xuan Fang,Jinhua Li,Dongxu Zhao,Dezhen Shen,Binghui Li,Xiaohua Wang
DOI: https://doi.org/10.1021/jp906175x
2009-01-01
Abstract:Phosphorus-doped ZnO nanorods and ZnO nanorod homojunctions were prepared by a hydrothermal method. The Structural and photoluminescent (PL) characterizations showed the P atoms doped into the ZnO crystal lattice. In low-temperature It spectra the emission peaks located at 3.310 and 3.241 eV were observed, which could be attributed to a conduction band to the phosphorus-related acceptor transition and a donor-acceptor pair transition, respectively. ZnO homojunctions were synthesized by P-doped ZnO nanorods grown oil undoped ZnO nanorods. The current-voltage (I-V) measurement based oil the ZnO nanorod p-n homojunctions showed I typical semiconductor rectification characteristic with a turn-on voltage of about 3 14 V, which meant the Conductivity of the P-doped ZnO nanorod might be a p-type conductivity. The electroluminescence was observed at room temperature for this homojunction, which contained a violet-blue emission and a broad visible band emission
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