Abstract:Wide band infrared photodetectors have found a wide range of applications in sensing, communication, and spectral analysis. However, the commonly used infrared photodetectors are based on Ge and III-V semiconductors which are not complementary metal-oxide-semiconductor (CMOS) compatible and therefore have limited applications. There is a huge demand for silicon-based infrared photodetectors due to its low-cost and compatibility with CMOS processes. Nevertheless, the spectral bandwidth of Si photodetectors is limited to wavelengths below 1.1 mu m. Several approaches are developed to extend Si photodetection bandwidth to communication wavelengths. Er/O doped Si is a promising approach which, however, suffers from low infrared responsivities at room temperature when the samples are treated with the standard rapid thermal annealing (RTA). In this work, a novel deep cooling process to treat Er/O doped silicon waveguide photodiodes is applied. In comparison with RTA process, the deep cooling process reduces the defect concentration in silicon by two orders of magnitude, resulting in a two-orders-of-magnitude reduction in leakage current density and an enhanced photoresponsivity to 100 mA W-1 at 1510 nm. The 3dB bandwidth of the silicon waveguide photodiode reaches 30 kHz. The device performance can be further improved by optimizing the deep cooling condition and Er/O doping concentration.

A Stable Porous Silicon Dielectric Reflector with a Photonic Band Gap Centred at 10Μm

1D partially oxidized porous silicon photonic crystal reflector for mid-infrared application

Omnidirectional Photonic Crystal Reflector Used in Ultraviolet Region

Fabrication of a Reflective Mirror Within Wide Incidence Angles for Mid-Infrared Wavelength

Fabrication of IR Reflectors by Porous Silicon Technique

An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for A Far-Infrared Image Detector

A Tunable Silicon Ring Reflector

Silicon Reflectors for External Cavity Lasers Based on Ring Resonators

Reflectivity of porous-pyramids structured silicon surface

Optimization of Porous Silicon Structure As Antireflective Material

Tuning the peak position of subwavelength silica nanosphere broadband antireflection coatings.

Efficient Er/O Doped Silicon Photodiodes at Communication Wavelengths by Deep Cooling

Design and Fabrication of SiO2/Si3N4 Dielectric Distributed Bragg Reflectors for Ultraviolet Optoelectronic Applications

PbZr0.4Ti0.6O3 Dielectric Reflectors with Large Photonic Band Gap and High Average Optical Reflectivity

Multi-scale Micro-Nano Structures Prepared by Laser Cleaning Assisted Laser Ablation for Broadband Ultralow Reflectivity Silicon Surfaces in Ambient Air

Patterning of SiO2 Interfaces for Radiative Cooling Applications

Extended infrared responses in Er/O-hyperdoped Si at room temperature

High Transparent Mid-Infrared Silicon "window" Decorated with Amorphous Photonic Structures Fabricated by Facile Phase Separation

Broadband Mid-Infrared Antireflection Metasurfaces Based on Silicon

Wide-band “black Silicon” Based on Porous Silicon

Fabrication and performance of a medium-dependent SiO_2/Si photonic heterostructure device