Si Underlayer Induced Nano-Ablation In Aginsbte Thin Films

Jiao Xin-Bing,Wei Jing-Song,Gan Fu-Xi
DOI: https://doi.org/10.1088/0256-307x/25/1/057
2008-01-01
Chinese Physics Letters
Abstract:AgInSbTelSi thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.
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