Abstract:Phase change materials have been widely applied in optical data storage technique to produce rewritable versions of compact disks and digital versatile disks random access memory and are still promising for higher capacity optical data storage. In optical data storage system, laser irradiation is used to write and read information in phase change film. The original phase state of phase change film without annealing is amorphous state. After laser irradiation, the laser energy transferred to phase change film increases temperature to create crystalline features. To study the effects of laser wavelength and fluence on feature fabrication, different kinds of laser systems are used to irradiate non-annealing phase change film to fabricate crystalline features in micro/nano-sizes. Electrical force microscopy and near-field scanning optical microscopy are used to characterize the electrical and optical properties of phase change film, respectively. Two kinds of phase change film, Ge1Sb2Te4 and Sb2Te3, are used. Alkaline solution has the ability to etch the amorphous and crystalline states of phase change film selectively. The phase change film patterned by laser irradiation is etched by alkaline solution to fabricate two- and three-dimensional structures. The etching selectivity and rate of alkaline solution for the two phase change films are studied. It provides a novel approach to fabricate new functional micro/nano devices by combining further etching or deposition techniques.

Laser Direct Writing Pattern Structures on Aginsbte Phase Change Thin Film

Patterned structures fabricated on chalcogenide phase-change thin films by laser direct writing

Marangoni effect induced micro/nano-patterning on Sb 2 Te 3 phase change thin film by laser pulse

Optical–electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Pattern structures fabricated on ZnS–SiO<sub>2</sub>/AgO<sub><i>x</i></sub>/ZnS–SiO<sub>2</sub> thin film structure by laser direct writing technology

Pattern structures fabricated on ZnS–SiO 2 /AgO x /ZnS–SiO 2 thin film structure by laser direct writing technology

Optical Properties and Recording Performance of the New Type AgInSbTe Phase Change Film

Hybrid laser micro/nanofabrication of phase change materials with combination of chemical processing

Micro-Structural Observation Of Short-Wavelength Recorded Spots Of Phase Change Thin Film By Atomic Force Microscopy

Si Underlayer Induced Nano-Ablation In Aginsbte Thin Films

Fs Laser Patterning of Amorphous As2S3 Thin Films

Patterning of Phase Change Films with Microlens Arrays

Microstructures of Patterned Nc-Si Superlattices Made by Pulsed Laser Interference Crystallization

Understanding femtosecond laser internal scribing of diamond by atomic simulation: Phase transition, structure and property

Preparation and Characterization of Laser-Irradiation Induced Amorphous for Ge 2 Sb 2 Te 5 Phase-Change Materials

Optical properties of Ag8In14Sb55Te23 phase-change films

Observation Of Microstructures On The Recording Films Of Ag8in14sb55te23 And Phthalocyanine By Afm

Thermodynamic Processes on a Semiconductor Surface During In‐situ Multi‐beam Laser Interference Patterning

Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy

Optical Properties And Static Recording Performances Of Ag-In-Te-Sb-O Films Using Short-Wavelength Laser